Design of RF integrated circuits using SiGe bipolar technology
| Autor: | S. Gerlach, R. Gotzfried, F. Beisswanger |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
Heterojunction bipolar transistor Hardware_PERFORMANCEANDRELIABILITY Integrated circuit Integrated circuit design law.invention chemistry.chemical_compound Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering Device parameters RF front end business.industry Amplifier Bipolar junction transistor Electrical engineering Digital Enhanced Cordless Telecommunications Heterojunction Low-noise amplifier Silicon-germanium chemistry Optoelectronics Antenna (radio) business Hardware_LOGICDESIGN |
| Zdroj: | IEEE Journal of Solid-State Circuits. 33:1417-1422 |
| ISSN: | 0018-9200 |
| Popis: | We report on design aspects and the implementation of radio-frequency integrated circuits using TEMIC's SiGe technology. The differences between the device parameters of silicon bipolar junction transistor and silicon germanium heterojunction bipolar transistor technology and their influence on IC design are discussed. Design and measurement results of RFICs, including low noise amplifier, power amplifier, and single-pole, double-throw antenna switch for application in a 1.9 GHz digital enhanced cordless telecommunications RF front end are presented. |
| Databáze: | OpenAIRE |
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