Effects of rapid thermal annealing on the optical properties of low-loss 1.3μm GaInNAs∕GaAs saturable Bragg reflectors
Autor: | Roberto Macaluso, T. Jouhti, David Burns, Kimberley C. Hall, Gareth J. Valentine, Stephane Calvez, M. Pessa, Kenan Gundogdu, Martin D. Dawson, T. F. Boggess, Handong Sun |
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Přispěvatelé: | H D SUN, MACALUSO R, S CALVEZ, G J VALENTINE, D BURNS, M D DAWSON, K GUNDOGDU, K C HALL, T F BOGGESS, T JOUTHI AND M PESSA, School of Physical and Mathematical Sciences |
Rok vydání: | 2004 |
Předmět: |
Science::Physics::Optics and light [DRNTU]
Photoluminescence Materials science Condensed Matter::Other business.industry chemical beam Physics::Optics General Physics and Astronomy Nonlinear optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Distributed Bragg reflector Blueshift Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry Optoelectronics Semiconducting gallium Rapid thermal annealing business Semiconductor quantum wells Refractive index Quantum well |
Zdroj: | Journal of Applied Physics. 96:1418-1424 |
ISSN: | 1089-7550 0021-8979 |
DOI: | 10.1063/1.1767612 |
Popis: | We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 mum saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of optical transition energies and another from the reduction of carrier localization. Time-resolved photoluminescence results at room temperature provide information about the recombination dynamics of carriers directly relevant to the application of the SBR in laser mode locking. Published version |
Databáze: | OpenAIRE |
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