Comparison between front- and back-gating of Silicon Nanoribbons in real-time sensing experiments

Autor: Carlotta Guiducci, J. Buckley, Thomas Ernst, G. Cappi, E. Accastelli
Předmět:
Popis: Field-effect transistors (FETs) with open gate structures such as Silicon Nanoribbons (SiNRs) are promising candidates to become general platforms for ultrasensitive, label-free and real-time detection of biochemical interactions on surface. This work proposes and demonstrates the viability of a solution for integrating Ag/AgCl reference electrodes with the microfluidics. A comparison between different polarization schemes is carried out with an analysis of the respective advantages and disadvantages.
Databáze: OpenAIRE