Growth and characterization of InSb on (1 0 0) Si for mid-infrared application
| Autor: | Kian Hua Tan, Soon Fatt Yoon, Bo Wen Jia, Satrio Wicaksono, Wan Khai Loke |
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| Přispěvatelé: | School of Electrical and Electronic Engineering |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Diffraction
Electron mobility Materials science Electrical and electronic engineering::Semiconductors [Engineering] General Physics and Astronomy 02 engineering and technology 01 natural sciences Crystal Hall effect 0103 physical sciences 010302 applied physics business.industry Doping Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Molecule Beam Epitaxy Quantum dot Transmission electron microscopy Optoelectronics Compound Semiconductor 0210 nano-technology business Layer (electronics) |
| Popis: | Monolithic integration of InSb on (1 0 0) Si is a practical approach to realizing on-chip mid-infrared photonic devices. An InSb layer was grown on a (1 0 0) Si substrate using an AlSb/GaSb buffer containing InSb quantum dots (QDs). The growth process for the buffer involved the growth of GaSb on Si using an interfacial misfit array, followed by InSb QDs on AlSb to decrease the density of microtwins. InSb layers were separately grown on AlSb and GaSb surfaces to compare the effect of different interfacial misfit arrays. The samples were characterized using transmission electron microscopy and X-ray diffraction to determine the structural properties of the buffer and InSb layers. The InSb on the AlSb sample exhibited higher crystal quality than the InSb on GaSb sample due to a more favorable arrangement of interfacial misfit dislocations. Hall measurements of unintentionally doped InSb layers demonstrated a higher carrier mobility in the InSb on the AlSb sample than in InSb on GaSb. Growing InSb on AlSb also improved the photoresponsivity of InSb as a photoconductor on Si. NRF (Natl Research Foundation, S’pore) Accepted version |
| Databáze: | OpenAIRE |
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