Room-temperature, high-deposition-rate, plasma-enhanced chemical vapour deposition of silicon oxynitride thin films producing low surface damage on lattice-matched and pseudomorphic III–V quantum-well structures
| Autor: | W. Rothemund, J. Wagner, H. Baumann, B. Dischler, R.E. Sah, John D. Ralston, Eric C. Larkins, G. Eichin |
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| Přispěvatelé: | Publica |
| Rok vydání: | 1995 |
| Předmět: |
Materials science
Silicon oxynitride Metals and Alloys Analytical chemistry Surfaces and Interfaces Chemical vapor deposition Sputter deposition silicon oxide Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound silicon nitride chemistry Silicon nitride chemical vapour deposition chemische Dampfabscheidung Plasma-enhanced chemical vapor deposition Nuclear reaction analysis Materials Chemistry Wafer Thin film Silizium-Nitrid Silizium-Oxyd |
| Zdroj: | Thin Solid Films. 259:225-230 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(94)06446-6 |
| Popis: | Silicon oxynitride thin films have been deposited at room temperature on GaAs using the PECVD technique with SiH 4 , N 2 O and Ar in a modified magnetron sputtering system. Typical deposition rates were on the order of 350 nm min −1 , substantially higher than has been previously achieved for room-temperature deposition with good optical and mechanical quality. At a fixed ratio of precursor gases SiH 4 : N 2 O : Ar = 14:33:160 sccm, bias potential V B = −50 V , and total deposition pressure P =32 mTorr, the atomic ratios of Si/O and N/O were found to be 1.25 and 0.14, respectively, using Rutherford backscattering spectroscopy. From nuclear reaction analysis, the hydrogen content was found to be 6 at.%, much lower than is typical for low-temperature PECVD films. The deviation in the uniformity of the film thickness was within ± 4% across a 2′ GaAs wafer. For the above deposition conditions, the refractive index and the optical band-gap of the films were 1.9 and 2.0 eV, respectively. Raman and photoluminescence spectra show practically no surface damage following film deposition on GaAs/AlGaAs modulation-doped field-effect transistor, unstrained GaAs/AlGaAs quantum-well (QW) structures and pseudomorphic InGaAs/GaAs QW structures. |
| Databáze: | OpenAIRE |
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