Microcrystalline and micromorph device improvements through combined plasma and material characterization techniques
| Autor: | Gaetano Parascandolo, Benjamin Strahm, Andrea Feltrin, A. C. Bronneberg, R. Bartlome, Grégory Bugnon, Christophe Ballif |
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| Přispěvatelé: | Plasma & Materials Processing |
| Rok vydání: | 2011 |
| Předmět: |
Fabrication
Materials science Silicon Renewable Energy Sustainability and the Environment business.industry Open-circuit voltage Micromorph Solar cell Analytical chemistry Intrinsic stress chemistry.chemical_element Chemical vapor deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Microcrystalline chemistry law Microcrystalline silicon Optoelectronics Deposition (phase transition) business |
| Zdroj: | Solar Energy Materials and Solar Cells, 95(1), 134-137. Elsevier |
| ISSN: | 0927-0248 |
| Popis: | Hydrogenated microcrystalline silicon (µc-Si:H) growth by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) is studied in an industrial-type parallel plate KAI reactor. Combined plasma and material characterization techniques allow to assess critical deposition parameters for the fabrication of high quality material. A relation between low intrinsic stress of the deposited i-layer and better performing solar cell devices is identified. Significant solar cell device improvements were achieved based on these findings: high open circuit voltages above 520 mV and fill factors above 74% were obtained for 1 µm thick µc-Si:H single junction cells and a 1.2 cm2 micromorph device with 12.3% initial (Voc=1.33 V, FF=72.4%, Jsc=12.8 mA cm-2) and above 10.0% stabilized efficiencies. |
| Databáze: | OpenAIRE |
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