Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure
| Autor: | I. Bernacka-Wojcik, Rodrigo Martins, Márcia Vilarigues, L.B. Silva, Elvira Fortunato, Sergej Filonovich, Cristina Gaspar, Hugo Águas |
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| Přispěvatelé: | Kemian tekniikan korkeakoulu, School of Chemical Technology, Materiaalitekniikan laitos, Department of Materials Science and Engineering, Aalto-yliopisto, Aalto University |
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Structural properties Silicon H [nc-Si] PECVD Nanocrystalline silicon Analytical chemistry chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Silane Surfaces Coatings and Films Amorphous solid chemistry.chemical_compound chemistry Chemical engineering Plasma-enhanced chemical vapor deposition Doping Trimethylboron Thin film Instrumentation Layer (electronics) |
| Zdroj: | CIÊNCIAVITAE |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2009.03.017 |
| Popis: | In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure (≥4 mbar), high plasma power and low substrate temperature (≤200 °C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-type nanocrystalline silicon thin films with very high crystallinity, high value of dark conductivity (>7 (Ω cm) −1 ) and high optical band gap (≥1.7 eV). Modeling of ellipsometry spectra reveals that the film growth mechanism should proceed through a sub-surface layer mechanism that leads to silicon crystallization. The obtained films are very good candidates for application in amorphous and nanocrystalline silicon solar cells as a p-type window layer. |
| Databáze: | OpenAIRE |
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