Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE
| Autor: | Jaime Santoyo-Salazar, Y. L. Casallas-Moreno, C. M. Yee-Rendón, S. Gallardo-Hernández, Jorge A. Huerta-Ruelas, M. Ramírez-López, Máximo López-López, A. Guillen-Cervantes, J.S. Arias-Cerón, J.G. Mendoza-Alvarez |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Photoluminescence
Materials science Nucleation Substrate (electronics) Crystal structure lcsh:Technology Article self-assembly of nanocolumns molecular beam epitaxy General Materials Science Al interlayer lcsh:Microscopy lcsh:QC120-168.85 lcsh:QH201-278.5 lcsh:T InN nanocolumns Amorphous solid Crystallography Transmission electron microscopy lcsh:TA1-2040 lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering Dislocation lcsh:Engineering (General). Civil engineering (General) lcsh:TK1-9971 Molecular beam epitaxy |
| Zdroj: | Materials Volume 12 Issue 19 Materials, Vol 12, Iss 19, p 3203 (2019) |
| ISSN: | 1996-1944 |
| DOI: | 10.3390/ma12193203 |
| Popis: | Self-assembled InN nanocolumns were grown at low temperatures by plasma-assisted molecular beam epitaxy with a high crystalline quality. The self-assembling procedure was carried out on AlN/Al layers on Si(111) substrates avoiding the masking process. The Al interlayer on the Si(111) substrate prevented the formation of amorphous SiN. We found that the growth mechanism at 400 ∘ C of InN nanocolumns started by a layer-layer (2D) nucleation, followed by the growth of 3D islands. This growth mechanism promoted the nanocolumn formation without strain. The nanocolumnar growth proceeded with cylindrical and conical shapes with heights between 250 and 380 nm. Detailed high-resolution transmission electron microscopy analysis showed that the InN nanocolumns have a hexagonal crystalline structure, free of dislocation and other defects. The analysis of the phonon modes also allowed us to identify the hexagonal structure of the nanocolumns. In addition, the photoluminescence spectrum showed an energy transition of 0.72 eV at 20 K for the InN nanocolumns, confirmed by photoreflectance spectroscopy. |
| Databáze: | OpenAIRE |
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