Semi-Transparent a-IGZO Thin-Film Transistors with Polymeric Gate Dielectric

Autor:	Young Kwan Kim, Eou-Sik Cho, Zhao-Hui Li, Gun Woo Hyung, Sang Jik Kwon, Ja Ryong Koo, Jian-Xun Wang
Rok vydání:	2013
Předmět:	Fabrication Materials science business.industry Gate dielectric Biomedical Engineering Bioengineering General Chemistry Condensed Matter Physics Thin-film transistor Gate oxide Electrode Transmittance Optoelectronics General Materials Science business Sheet resistance High-κ dielectric
Zdroj:	Journal of Nanoscience and Nanotechnology. 13:4052-4055
ISSN:	1533-4880
Popis:	We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with crosslinked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum approximately 5.8 cm2Ns) and on/off current ratios of approximately 10(6).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::583ebe9323c723111032974ca2669f73 https://doi.org/10.1166/jnn.2013.7029 Zobrazit plný text záznamu