Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy

Autor:	V.Y. Davydov, G. Constantinidis, Jan Kuzmik, M. Calamiotou, M. Androulidaki, A. Cornet, M. Pavelescu, K. Amimer, Francesca Peiró, Jordi Arbiol, Spiros Mikroulis, Katerina Tsagaraki, Alexandros Georgakilas
Rok vydání:	2001
Předmět:	Materials science Mechanical Engineering Analytical chemistry Mineralogy Surface finish Condensed Matter Physics Mechanics of Materials Residual stress Ultimate tensile strength Surface roughness General Materials Science Radio frequency Thin film Layer (electronics) Molecular beam epitaxy
Zdroj:	ResearcherID
ISSN:	0921-5107
Popis:	The material properties of GaN thin films grown by radio frequency (RF) nitrogen plasma source molecular beam epitaxy (MBE) on (0001) Al2O3 substrates have been correlated to the V/III flux ratio during GaN growth and to the type and thickness of the buffer layer. The most remarkable observation is the change in the sign of the residual strain, from tensile to compressive as the V/III ratio alters from N-rich to stoichiometric (or slightly Ga-rich) conditions for GaN layers with a 17 nm AlN buffer layer. The residual strain was significantly reduced for a thinner 5 nm AlN buffer and it was zero for a 20 nm GaN buffer. A reduction of the rms surface roughness from 20 to 3 nm was achieved by decreasing the V/III ratio. Finally, stacking faults were observed only for significantly N-rich growth conditions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::582747e185c0cd22390e797086903741 https://doi.org/10.1016/s0921-5107(00)00646-2 Zobrazit plný text záznamu Full Text from ScienceDirect