Directional electron-filtering at a superconductor-semiconductor interface
| Autor: | T. M. Klapwijk, Daniel Breunig, Björn Trauzettel, Song-Bo Zhang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Superconductivity
Materials science Condensed matter physics business.industry Condensed Matter - Superconductivity FOS: Physical sciences 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Andreev reflection Superconductivity (cond-mat.supr-con) Semiconductor 0103 physical sciences Perpendicular Current (fluid) 010306 general physics 0210 nano-technology business Focus (optics) Electronic band structure |
| Zdroj: | Physical Review B, 103(16) |
| ISSN: | 2469-9950 |
| Popis: | We evaluate the microscopically relevant parameters for electrical transport of hybrid superconductor-semiconductor interfaces. In contrast to the commonly used geometrically constricted metallic systems, we focus on materials with dissimilar electronic properties like low-carrier density semiconductors combined with superconductors, without imposing geometric confinement. We find an intrinsic mode-selectivity, a directional momentum-filter, due to the differences in electronic band-structure, which creates a separation of electron reservoirs each at the opposite sides of the semiconductor, while at the same time selecting modes propagating almost perpendicular to the interface. The electronic separation coexists with a transport current dominated by Andreev reflection and low elastic back-scattering, both dependent on the gate-controllable electronic properties of the semiconductor. 9 pages, 6 figures |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|