Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap
| Autor: | A. del Prado, Javier Olea, Antonio Martí, Elisa Antolin, Esther López, David Pastor, E. García-Hemme, Germán González-Díaz, R. García-Hernansanz, Antonio Luque |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Acoustics and Ultrasonics Silicon Band gap chemistry.chemical_element 02 engineering and technology 01 natural sciences 7. Clean energy Intermediate band 0103 physical sciences Electromagnetismo 010302 applied physics Supersaturation Range (particle radiation) business.industry Carrier lifetime 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Energías Renovables Optoelectronics Electrónica Electricidad 0210 nano-technology business Layer (electronics) Titanium |
| Zdroj: | E-Prints Complutense. Archivo Institucional de la UCM instname Journal of Physics D: Applied Physics, ISSN 0022-3727, 2016-01, Vol. 49, No. 5 Archivo Digital UPM Universidad Politécnica de Madrid E-Prints Complutense: Archivo Institucional de la UCM Universidad Complutense de Madrid |
| Popis: | Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors. |
| Databáze: | OpenAIRE |
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