| Autor: |
PM Paul Koenraad, AJ Adam Urbanczyk, JG Joris Keizer, R Richard Nötzel |
| Přispěvatelé: |
Photonics and Semiconductor Nanophysics, Semiconductor Nanostructures and Impurities |
| Jazyk: |
angličtina |
| Rok vydání: |
2013 |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters, 102(7):073103, 073103-1/4. American Institute of Physics |
| ISSN: |
0003-6951 |
| Popis: |
We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 mu m. We correlate this finding with cross-sectional scanning tunneling microscopy measurements. They reveal that the QDs are composed of pure InAs which is in agreement with their long-wavelength emission. Additionally, the measurements reveal that the QDs have an anomalously undulated top surface which is very different to that observed for Stranski-Krastanow grown QDs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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