Drain Current Recovery Time Analyses of InAlGaN/GaN HEMTs Realized with a Back-Barrier Buffer Layer
| Autor: | J.C. Jacquet, Piero Gamarra, Eric Chartier, Stéphane Piotrowicz, Sylvain Delage, C. Potier, M. Oualli, N. Michel, P. Altuntas, Christian Dua, Michel Prigent, Jean-Christophe Nallatamby, Cedric Lacam, O. Patard |
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| Přispěvatelé: | Alcatel-Thales III-V Lab (III-V Lab), THALES, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Systèmes RF (XLIM-SRF), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Gate length 020206 networking & telecommunications 02 engineering and technology Electron High-electron-mobility transistor Buffer (optical fiber) [SPI]Engineering Sciences [physics] Sic substrate 0202 electrical engineering electronic engineering information engineering Optoelectronics business Drain current Layer (electronics) Microwave ComputingMilieux_MISCELLANEOUS |
| Zdroj: | 2019 14th European Microwave Integrated Circuits Conference (EuMIC) 2019 14th European Microwave Integrated Circuits Conference (EuMIC), Sep 2019, Paris, France. pp.41-44, ⟨10.23919/EuMIC.2019.8909641⟩ |
| DOI: | 10.23919/EuMIC.2019.8909641⟩ |
| Popis: | This article presents the performances obtained on a $0.15 \mu \mathrm{m}$ gate length InAlGaN/GaN HEMT technology on SiC substrate. This technology uses a back-barrier buffer layer to ensure the confinement of electrons in the channel, which minimizes variations of the drain current when the HEMT devices are submitted to DC or RF pulses. Measurements of the drain current recovery time are shown when the devices are submitted to V DS , V GS or microwave RF pulses. A comparison with an AlGaN/GaN HEMT structure designed with an iron doped buffer layer is proposed. |
| Databáze: | OpenAIRE |
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