Stranski-Krastanov Growth of InN Nanostructures on GaN Studied by RHEED, STM and AFM

Autor:	Martin R. Castell, C. Nörenberg, L. Allers, Rachel A. Oliver, G. A. D. Briggs, M G Martin
Rok vydání:	2002
Předmět:	Thin layers Stranski–Krastanov growth Nanostructure Reflection high-energy electron diffraction Equilibrium thermodynamics Chemistry Monolayer Analytical chemistry Nanotechnology Thin film Condensed Matter Physics Electronic Optical and Magnetic Materials Molecular beam epitaxy
Zdroj:	physica status solidi (a). 194:536-540
ISSN:	1521-396X 0031-8965
Popis:	The growth of self-assembled InN nanostructures on GaN by MBE has been studied using two different nitrogen sources. Stranski-Krastanov growth may be achieved but is highly sensitive to the V: III ratio as well as coverage and temperature. The size and shape of the resultant nanostructures depend on the nitrogen source used. Using thermally cracked ammonia, Stranski-Krastanov growth occurred only for thin layers (up to 8 monolayers) at high V: III ratios, as observed by RHEED and AIM. The sensitivity of the growth to the V: III ratio may be explained in terms of the interplay between equilibrium thermodynamics and growth kinetics. Similar experiments at higher V:III ratios were performed using a modified nitrogen plasma source. Stranski-Krastanov growth occurred and was observed in-situ by RHEED. The as-grown nanostructures were imaged in-vacuo by elevated-temperature STM, showing the dependence of island size and distribution on the InN coverage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5718133af2ff989033693db6d976c7c3 https://doi.org/10.1002/1521-396x(200212)194:2<536::aid-pssa536>3.0.co Zobrazit plný text záznamu Plný text