Sulfurization and annealing effects on thermally evaporated CZTS films
| Autor: | Annamraju Kasi Viswanath, Vinod E. Madhavan, C. Sripan, Rajamohan Ganesan |
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| Rok vydání: | 2017 |
| Předmět: |
Diffraction
Materials science Band gap Annealing (metallurgy) Nanotechnology 02 engineering and technology engineering.material 01 natural sciences law.invention chemistry.chemical_compound symbols.namesake X-ray photoelectron spectroscopy law 0103 physical sciences Solar cell General Materials Science CZTS Kesterite 010302 applied physics Physics Mechanical Engineering 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry Chemical engineering Mechanics of Materials symbols engineering 0210 nano-technology Raman spectroscopy |
| Zdroj: | Materials Letters. 189:110-113 |
| ISSN: | 0167-577X |
| Popis: | Thermally evaporated Cu 2 Zn 1.5 Sn 1.2 S 4.4 (CZTS) films are annealed and sulfurized at different temperatures to study the structural modifications. The kesterite phase formation and phase purity of the CZTS films are compared and confirmed by X-ray diffraction and Raman spectroscopic technique. Surface oxidation state of the elements in the sulfurized film is studied by XPS. The calculated optical band gap of the 550 °C sulfurized CZTS film is found to be 1.56 eV; however getting modified due to annealing and sulfurization. The carrier concentration, resistance and mobility of the sulfurized films are found to be 2.8×10 14 cm −3 , 2686 Ω/square and 8.2 cm 2 V −1 s −1 respectively and the conduction type is p-type. This study sheds light on the effect of annealing and sulfurization on various phase-modifications and the light-harvesting capability of CZTS absorber layers for solar cell applications. |
| Databáze: | OpenAIRE |
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