Temperature and Light-Induced Changes in Bulk and Passivation Quality of Boron-Doped Float-Zone Silicon Coated With SiNx:H
| Autor: | Adrian Heilemann, Giso Hahn, Axel Herguth, David Sperber |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
inorganic chemicals
Chemical substance Materials science Passivation Silicon chemistry.chemical_element 02 engineering and technology 01 natural sciences Temperature measurement chemistry.chemical_compound 0103 physical sciences ddc:530 Electrical and Electronic Engineering 010302 applied physics business.industry Carrier lifetime Float-zone silicon 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Silicon nitride Optoelectronics Degradation (geology) 0210 nano-technology business |
| Zdroj: | IEEE Journal of Photovoltaics. 7:463-470 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2017.2649601 |
| Popis: | In this study, it is observed that boron-doped float-zone silicon coated with hydrogenated silicon nitride shows strong instabilities in effective minority carrier lifetime after a fast firing step and subsequent treatment at elevated temperatures and illumination. During such a treatment, both degradation and recovery features are visible over time scales from minutes to months. To further investigate the observed behavior, corona charging series, capacitance voltage measurements, and chemical repassivation methods are applied. It is shown that a first fast degradation and recovery is associated with changes in the bulk lifetime, and it is observed that the fast firing step strongly influences this bulk instability. A subsequent slower degradation and recovery reflects changes in the effective surface recombination velocity that can be attributed to changes in the chemical passivation quality. It can be concluded that care has to be taken when boron-doped float-zone silicon is used as a supposedly stable high lifetime reference material after a fast firing step. Additionally, it can be stated that a silicon nitride related passivation may be far from stable at elevated temperatures and illumination after a fast firing step. published |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|