Formation Mechanisms of GaN Nanowires Grown by Selective Area Growth Homoepitaxy
| Autor: | Daniel Gómez Sánchez, Ž. Gačević, Enrique Calleja |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Coalescence (physics)
Materials science Nanohole Growth kinetics Mechanical Engineering Nanowire Nucleation Physics::Optics Bioengineering Nanotechnology General Chemistry Condensed Matter Physics Condensed Matter::Materials Science Nanocrystal Chemical physics Vertical growth General Materials Science Molecular beam epitaxy |
| Zdroj: | Nano Letters. 15:1117-1121 |
| ISSN: | 1530-6992 1530-6984 |
| Popis: | This work provides experimental evidence and theoretical explanations regarding the formation mechanisms of GaN nanowires grown by selective area growth on GaN-on-sapphire templates. The first growth stage, driven by selective area growth kinetics, consists of initial nucleation (along the nanohole inner periphery), coalescence onset and full coalescence, producing a single nanocrystal within each nanohole. In the second growth stage, driven by free-surface-energy minimization, the formed nanocrystal undergoes morphological evolution, exhibiting initial cylindrical-like shape, intermediate dodecagonal shape and a final, thermodynamically stable hexagonal shape. From this point on, the nanowire vertical growth proceeds while keeping the stable hexagonal form. |
| Databáze: | OpenAIRE |
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