Reliability analysis of LPCVD SiN gate dielectric for AlGaN/GaN MIS-HEMTs
| Autor: | Simon Alexander Jauss, Oliver Ambacher, Walter Daves, Stephan Schwaiger, Kazim Hallaceli, Sebastian Mansfeld |
|---|---|
| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Condensed matter physics business.industry Gate dielectric Electrical engineering Algan gan Gallium nitride 02 engineering and technology Dielectric Chemical vapor deposition 021001 nanoscience & nanotechnology Gate voltage 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry 0103 physical sciences Electrical and Electronic Engineering 0210 nano-technology business Current density |
| Popis: | In this paper, we investigate Low Pressure Chemical Vapor Deposition (LPCVD) SiN as a gate isolation material for AlGaN/gallium nitride (GaN) MIS-high electron mobility transistor power transistors. We compared the dielectric failure by forward-biased constant-current stress time-dependent dielectric breakdown measurements and statistical Weibull analysis. Several 4” AlGaN/GaN-on-Si wafers have been processed with different gate isolations and processes. Our investigation includes the dependence of the dielectric breakdown on the process flow (influence of dry etch), the thickness of the dielectric (12–20 nm), the area scaling, and the gate electrode, where we also consider the recently presented poly-silicon electrode. Additionally, we show the influence of the current density through the gate on the charge-to-breakdown characteristics as well as the influence of the temperature on the breakdown behavior. Using the poly-silicon electrode and 20 nm LPCVD SiN as gate isolation, we achieved a charge-to-breakdown of ${Q}_{\text {BD, 10}~\text {mA}/\text {cm}^{2}} ={3.7} ~ \text {kC}/\text {cm}^{{2}}$ at $\text {T} = {130} {^{\circ }}\text {C}$ for ${j} = {10} ~ \text {mA}/\text {cm}^{{2}}$ . A 20-years lifetime (100 ppm, $\text {T} = {130} {^{\circ }}\text {C}$ ) extrapolation for a scaled area of ${0.2} ~ \text {mm}^{{2}}$ ( $\buildrel \wedge \over = {W}_{G} = {100} ~ \text {mm}$ ) leads to a positive gate voltage of ${V}_{\text {G}} = {9.4} ~ \text {V}$ . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|