Étude des interfaces enterrées par diffraction de rayons X
| Autor: | A. Bourret |
|---|---|
| Jazyk: | francouzština |
| Rok vydání: | 1997 |
| Předmět: | |
| Zdroj: | Journal de Physique IV Proceedings Journal de Physique IV Proceedings, EDP Sciences, 1997, 07 (C6), pp.C6-19-C6-29. ⟨10.1051/jp4:1997602⟩ |
| ISSN: | 1155-4339 1764-7177 |
| DOI: | 10.1051/jp4:1997602⟩ |
| Popis: | X-ray diffraction (and/or diffusion) is a powerful tool for studying buried interfaces. The experimental X-ray techniques are reviewed, including reflectivity at low angle, extended reflectivity, non-specular diffuse scattering, grazing incidence diffractometry. The main results obtained recently on a variety of interfaces are presented briefly for different couples of solid or liquid materials. Semiconductor-semiconductor and semiconductor-metals were among the most heavily studied: the determination of roughness, steps correlation or localised interfacial structures are available on several systems. The advent of new generation X-ray synchrotron sources opens up new perspectives in this field. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|