Independent Control Over Size and Surface Density of Droplet Epitaxial Nanostructures Using Ultra-Low Arsenic Fluxes
| Autor: | Oleg A. Ageev, Natalia E. Chernenko, M. S. Solodovnik, S. V. Balakirev, M. M. Eremenko |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Nanostructure arsenic flux General Chemical Engineering Nanophotonics chemistry.chemical_element 02 engineering and technology indium Epitaxy 01 natural sciences Article Gallium arsenide droplet epitaxy Physics::Fluid Dynamics chemistry.chemical_compound Condensed Matter::Materials Science 0103 physical sciences nanostructures Physics::Atomic and Molecular Clusters Deposition (phase transition) General Materials Science QD1-999 010302 applied physics Resistive touchscreen business.industry 021001 nanoscience & nanotechnology gallium arsenide Chemistry chemistry Quantum dot Optoelectronics 0210 nano-technology business Indium |
| Zdroj: | Nanomaterials Volume 11 Issue 5 Nanomaterials, Vol 11, Iss 1184, p 1184 (2021) |
| ISSN: | 2079-4991 |
| Popis: | Modern and future nanoelectronic and nanophotonic applications require precise control of the size, shape and density of III-V quantum dots in order to predefine the characteristics of devices based on them. In this paper, we propose a new approach to control the size of nanostructures formed by droplet epitaxy. We reveal that it is possible to reduce the droplet volume independently of the growth temperature and deposition amount by exposing droplets to ultra-low group-V flux. We carry out a thorough study of the effect of arsenic pressure on the droplet characteristics and demonstrate that indium droplets with a large initial size (> 100 nm) and a low surface density (< 108 cm−2) are able to shrink to dimensions appropriate for quantum dot applications. Small droplets are found to be unstable and difficult to control, while larger droplets are more resistive to arsenic flux and can be reduced to stable, small-sized nanostructures (~30 nm). We demonstrate the growth conditions under which droplets transform into dots, ring and holes and describe a mechanism of this transformation depending on the ultra-low arsenic flux. Thus, we observe phenomena which significantly expand the capabilities of droplet epitaxy. |
| Databáze: | OpenAIRE |
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