High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%
| Autor: | Mark C. A. York, Denis Masson, Richard Arès, Vincent Aimez, Philippe-Olivier Provost, F. Proulx, Simon Fafard, L. S. Richard |
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| Přispěvatelé: | Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire de Génie des Procédés et Matériaux - EA 4038 (LGPM), CentraleSupélec |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Open-circuit voltage business.industry Energy conversion efficiency Heterojunction 02 engineering and technology Semiconductor device 021001 nanoscience & nanotechnology 7. Clean energy 01 natural sciences Gallium arsenide Wavelength chemistry.chemical_compound [SPI]Engineering Sciences [physics] Optics chemistry 0103 physical sciences Optoelectronics Continuous wave Quantum efficiency 0210 nano-technology business ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2016, 109 (13), ⟨10.1063/1.4964120⟩ |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.4964120⟩ |
| Popis: | Photovoltaic power converting III–V semiconductor devices based on the Vertical Epitaxial HeteroStructure Architecture (VEHSA) design have been achieved with up to 20 thin p/n junctions (PT20). Open circuit photovoltages in excess of 23 V are measured for a continuous wave monochromatic optical input power of ∼1 W tuned in the 750 nm–875 nm wavelength range. Conversion efficiencies greater than 60% are demonstrated when the PT20 devices are measured near the peak of their spectral response. Noticeably, the PT20 structure is implemented with its narrowest ultrathin base having a thickness of only 24 nm. In the present study, the spectral response of the PT20 peaks at external quantum efficiency (EQE) of 89%/20 for an input wavelength of 841 nm. We also performed a detailed analysis of the EQE dependence with temperature and for VEHSA structures realised with a varied number of p/n junctions. The systematic study reveals the correlations between the measured conversion efficiencies, the EQE behavior, and th... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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