Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites

Autor:	A.K. Oginskis, F. Anisimovas, J. Devenson, Kristina Šliužienė, V. Lisauskas, Bonifacas Vengalis, A. M. Rosa, V. Pyragas
Rok vydání:	2005
Předmět:	Materials science Magnetoresistance Condensed matter physics chemistry Sputtering Electrical resistivity and conductivity Lanthanum General Physics and Astronomy chemistry.chemical_element Heterojunction Electron Fermion Electromagnetic radiation
Zdroj:	Acta Physica Polonica A. 107:290-293
ISSN:	1898-794X 0587-4246
DOI:	10.12693/aphyspola.107.290
Popis:	High crystalline quality films of n-La2/3Ce1/3MnO3, p-La2/3Ca1/3MnO3 and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO3(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La2/3Ce1/3Mn O3/La2/3Ca1/3MnO3 bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56128a7d965c8c14f5ccdce021d772c5 https://doi.org/10.12693/aphyspola.107.290 Zobrazit plný text záznamu