Electronic Properties and Field-Effect Transistors of Oligomers End-Capped with Benzofuran Moieties

Autor:	Magali Allain, Takeshi Watanabe, Charlotte Mallet, Noriyuki Yoshimoto, Yahia Didane, Christine Videlot-Ackermann, Pierre Frère
Přispěvatelé:	MOLTECH-Anjou, Université d'Angers (UA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Kyoto University [Kyoto], Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Kyoto University
Rok vydání:	2013
Předmět:	Materials science 02 engineering and technology 010402 general chemistry Photochemistry 01 natural sciences chemistry.chemical_compound Furan Thiophene [CHIM]Chemical Sciences Benzofuran Thin film ComputingMilieux_MISCELLANEOUS [CHIM.ORGA]Chemical Sciences/Organic chemistry business.industry Molecular electronics [CHIM.MATE]Chemical Sciences/Material chemistry General Chemistry 021001 nanoscience & nanotechnology 0104 chemical sciences Crystallography Semiconductor chemistry Field-effect transistor Cyclic voltammetry 0210 nano-technology business
Zdroj:	ChemPlusChem ChemPlusChem, Wiley, 2013, 78 (5), pp.459-466 HAL ChemPlusChem, 2013, 78 (5), pp.459-466
ISSN:	2192-6506
DOI:	10.1002/cplu.201300037
Popis:	Three new oligomers bearing furan, thiophene, or bithiophene units end-capped by benzofuran moieties were synthesized and studied with respect to their structural, optical, electrochemical, and electrical properties. A comparison of the electronic properties performed by theoretical calculation, absorption and emission spectroscopy, and cyclic voltammetry revealed a strong influence of the spacer unit with a predominant impact on the emission spectra. Although both compounds with thiophene or bithiophene as central units presented relatively low quantum yields of 30 and 17 %, respectively, a maximum yield up to 71 % was measured for the compound based on a central furan core. High-vacuum-evaporated thin films were investigated by X-ray diffraction and AFM, before implementation as p-type semiconducting layers in organic field-effect transistors. Only derivatives with thiophene or bithiophene as central units presented a transistor activity, with mobilities up to approximately 1×10−2 cm2 V−1 s−1.
Databáze:	OpenAIRE
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