Two-dimensional materials prospects for non-volatile spintronic memories

Autor: Hyunsoo Yang, Sergio O. Valenzuela, Mairbek Chshiev, Sébastien Couet, Bernard Dieny, Bruno Dlubak, Albert Fert, Kevin Garello, Matthieu Jamet, Dae-Eun Jeong, Kangho Lee, Taeyoung Lee, Marie-Blandine Martin, Gouri Sankar Kar, Pierre Sénéor, Hyeon-Jin Shin, Stephan Roche
Přispěvatelé: Department of Electrical and Computer Engineering, National University of Singapore (NUS), ICN2 - Institut Catala de Nanociencia i Nanotecnologia (ICN2), Universitat Autònoma de Barcelona (UAB), Institució Catalana de Recerca i Estudis Avançats (ICREA), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Institut Universitaire de France (IUF), Ministère de l'Education nationale, de l’Enseignement supérieur et de la Recherche (M.E.N.E.S.R.), IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES [France]-Centre National de la Recherche Scientifique (CNRS), Samsung Electronics [Korea], GLOBALFOUNDRIES Singapore Pte Ltd., Thales Research and Technology [Palaiseau], THALES [France], Samsung Advanced Institute of Technology (SAIT), Samsung, ANR-18-CE24-0007,MAGICVALLEY,Polarisation de vallée induite par couplage d'échange magnétique dans les matériaux 2D à grande échelle(2018), European Project: 881603,H2020,H2020-SGA-FET-GRAPHENE-2019, GrapheneCore3(2020), European Project: 306652,EC:FP7:ERC,ERC-2012-StG_20111012,SPINBOUND(2013), European Project: 669204,H2020,ERC-2014-ADG,MAGICAL(2015), European Commission, Agencia Estatal de Investigación (España), Ministerio de Ciencia e Innovación (España), National Research Foundation Singapore, Agence Nationale de la Recherche (France)
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Nature
Nature, 2022, 606, pp.663-673. ⟨10.1038/s41586-022-04768-0⟩
Digital.CSIC. Repositorio Institucional del CSIC
instname
ISSN: 0028-0836
1476-4687
DOI: 10.1038/s41586-022-04768-0⟩
Popis: Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments and challenges in regard to MRAM, and then outline the opportunities that can arise by incorporating two-dimensional material technologies. We highlight the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes.
M.C., S.C., B.D., A.F., K.G., M.-B. M., P.S., S.O.V. and S.R. acknowledge the European Union Horizon 2020 research and innovation programme for grant number 881603 (Graphene Flagship). The Catalan Institute of Nanoscience and Nanotechnology is supported by the Severo Ochoa Centres of Excellence programme, funded by the Spanish Research Agency (AEI, grant number SEV-2017-0706). S.O.V. thanks the European Research Council (ERC) under grant agreements 306652 SPINBOUND and 899896 SOTMEM, and the Spanish Research Agency (AEI), Ministry of Science and Innovation (PID2019-111773RB-I00/AEI/10.13039/501100011033). H.Y. is supported by SpOT-LITE programme (A*STAR grant, A18A6b0057) through RIE2020 funds, Singapore Ministry of Education (MOE) Tier 2 (R-263-000-E29-112), National Research Foundation (NRF) Singapore Investigatorship (NRFI06-2020-0015) and Samsung Electronics’ University R&D programme. S.C. and G.S.K. acknowledge IMEC’s Industrial Affiliation Program on MRAM devices. M.C. and M.J. acknowledge the French National Research Agency through the MAGICVALLEY project (ANR-18-CE24-0007). B. Dieny acknowledges ERC MAGICAL 669204. M.C. acknowledges H. X. Yang, A. Hallal and F. Ibrahim. P.S. and B. Dlubak acknowledge the French National Research Agency through the SoGraphMem project (ANR-18-CE24-0007).
Databáze: OpenAIRE
Externí odkaz: