Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy
| Autor: | Kazuo Tsutsui, Kentaro Matsuura, Takuro Sakamoto, Yuuta Suzuki, Iriya Muneta, Hitoshi Wakabayashi, Takumi Ohashi, Kuniyuki Kakushima, Nobuyuki Ikarashi |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon Condensed matter physics chemistry.chemical_element Substrate (electronics) Sputter deposition 01 natural sciences Condensed Matter::Materials Science chemistry Sputtering Hall effect 0103 physical sciences Particle Magnetic films Energy (signal processing) |
| Popis: | Radio-frequency magnetron sputtering method enables us to deposit a layered $\mathrm {M}\mathrm {o}\mathrm {S}_{2}$ film on a large-area silicon substrate. However, mobility of the sputtered $\mathrm {M}\mathrm {o}\mathrm {S}_{2}$ film has not yet reached the level of other deposition methods. In this study, particle energy is controlled during the sputtering process to enhance the mobility of $\mathrm {M}\mathrm {o}\mathrm {S}_{2}$ film. As a result, it is possible to obtain the high Hall-effect mobility of $46 [\mathrm {c}\mathrm {m}^{2}/\mathrm {V}\mathrm {s}]$ and the low carrier concentration of $10^{16} [\mathrm {c}\mathrm {m}^{-3}]$ even just after the $\mathrm {M}\mathrm {o}\mathrm {S}_{2}$ sputtering process. |
| Databáze: | OpenAIRE |
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