Comparative studies of EFG poly-Si grown by different procedures
Autor: | B.N. Evtody, Vesna Borjanović, Eugene A. Katz, Ivana Kovačević, Branko Pivac |
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Rok vydání: | 2002 |
Předmět: |
Supersaturation
Materials science Silicon Renewable Energy Sustainability and the Environment Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Crystal growth engineering.material polycrystalline silicon edge-defined film-fed growth defects oxygen carbon deep levels Oxygen Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystallography Polycrystalline silicon chemistry Impurity engineering Graphite |
Zdroj: | Solar Energy Materials and Solar Cells. 72:165-171 |
ISSN: | 0927-0248 |
Popis: | The impurity content in EFG polycrystalline silicon materials grown by different procedures from graphite and quartz crucible has been extensively studied using Fourier transform IR technique. It is shown that the oxygen content in the material is much more dependent on the growth atmosphere at meniscus than on the type of crucible. In all samples the carbon content remains supersaturated up to very high temperatures of annealing, not affected by the oxygen presence. |
Databáze: | OpenAIRE |
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