Computer simulations of fully cascadable picosecond all-optical logic using nonlinear semiconductor etalons
| Autor: | H. M. Gibbs, Stephan W. Koch, Dean Richardson |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Physics
business.industry Physics::Optics Nonlinear optics Semiconductor device Condensed Matter Physics Atomic and Molecular Physics and Optics Nonlinear system Semiconductor Logic gate Picosecond Optoelectronics Electrical and Electronic Engineering business Fabry–Pérot interferometer Energy (signal processing) |
| Zdroj: | IEEE Journal of Quantum Electronics. 27:804-808 |
| ISSN: | 0018-9197 |
| DOI: | 10.1109/3.81392 |
| Popis: | Nonlinear Fabry-Perot étalons have been studied vigorously in recent years as potential all-optical decision-making elements. Fundamental physical and engineering tradeoffs have thus far prevented their use in real-world systems. Bistable devices can be cascaded at megahertz rates but require strong holding powers and fail to demonstrate useful gain for subnanosecond pulses. Two-wavelength logic-gate étalons can switch in picoseconds with picojoule energies but have thus far proved difficult to cascade. In this talk we propose a paired semiconductor étalon scheme that attempts to solve these problems, and we present the results of computer simulations of the device concept. In the envisioned architecture a two-wavelength NOR-gate étalon is operated in series with an "upconverter" étalon to allow cascadable operation on a picosecond timescale. The paired device is predicted to achieve a fan-out of at least 2 and good overall contrast, requiring about 75 pj to perform a single logic operation/upconversion. Related simulations indicate that the NOR-gate étalon itself requires a minimum of 28 pJ to achieve the same contrast and fan-out. Thus the price for cascadability is basically a threefold increase in input energy over the NOR-gate alone. The energy requirement might be reduced through the use of multiple-quantum-well materials. The computer simulations of the device behavior are based on a realistic model for the carrier-density-dependent optical nonlinearities of bulk GaAs. |
| Databáze: | OpenAIRE |
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