Low-temperature growth of n ++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Autor:	Pirouz Sohi, Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Yao Chen
Přispěvatelé:	Sohi, Pirouz, Mosca, Mauro, Chen, Yao, Carlin, Jean-Francoi, Grandjean, Nicolas
Jazyk:	angličtina
Rok vydání:	2019
Předmět:	Materials Chemistry2506 Metals and Alloys Materials science Hydrogen chemistry.chemical_element 02 engineering and technology Chemical vapor deposition Condensed Matter Physic 01 natural sciences Settore ING-INF/01 - Elettronica law.invention Electrical resistivity and conductivity law 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Blue light Diode 010302 applied physics metalorganic chemical vapor deposition business.industry Electronic Optical and Magnetic Material 021001 nanoscience & nanotechnology Condensed Matter Physics blue light-emitting diode Electronic Optical and Magnetic Materials Band bending chemistry Optoelectronics Quantum efficiency 0210 nano-technology business Light-emitting diode GaN tunnel junction
Popis:	We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n ++-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5510a7ebe3feb40c851fa6243f950438 http://hdl.handle.net/10447/346947 Zobrazit plný text záznamu