Large-Signal Modelling of sub-THz InP Triple-Barrier Resonant Tunneling Diodes
| Autor: | E. Mutlu, Werner Prost, K. Aikawa, Khaled Arzi, Simone Clochiatti, Michihiko Suhara, Nils Weimann |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Physics::Instrumentation and Detectors business.industry Terahertz radiation Semiconductor device modeling Resonant-tunneling diode 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Signal 0103 physical sciences Scattering parameters Optoelectronics Equivalent circuit 0210 nano-technology business Quantum tunnelling Diode Elektrotechnik |
| Zdroj: | 2020 Third International Workshop on Mobile Terahertz Systems (IWMTS) |
| Popis: | A large-signal equivalent circuit model is developed for ultra-high frequency signal generation and detection provided by an InP triple barrier resonant tunneling diode. On-wafer DC and S-parameter measurements on 0.5 um2 and 1 um2 area devices were made from 20 MHz to 67 GHz. The bias dependent measurement data are utilized to extract the parameters of a compact RF model which accurately describes the static and dynamic behavior of the triple barrier resonant tunneling under zero bias and forward bias condition. |
| Databáze: | OpenAIRE |
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