Photoluminescence Tuning Through Irradiation Defects in CH$_3$NH$_3$PbI$_3$ Perovskites

Autor: Driffa Guerfa, Ferdinand Lédée, Gaëlle Trippé-Allard, Emmanuelle Deleporte, Olivier Plantevin, Damien Garrot, Stéphanie Valère
Přispěvatelé: Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Aimé Cotton (LAC), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Photoluminescence
Materials science
FOS: Physical sciences
02 engineering and technology
Applied Physics (physics.app-ph)
01 natural sciences
Tetragonal crystal system
0103 physical sciences
[CHIM.CRIS]Chemical Sciences/Cristallography
Irradiation
Spectroscopy
defects
hybrid perovskites
010302 applied physics
[PHYS]Physics [physics]
Condensed Matter - Materials Science
business.industry
ion irradiation
Materials Science (cond-mat.mtrl-sci)
Physics - Applied Physics
[CHIM.MATE]Chemical Sciences/Material chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Crystallographic defect
Electronic
Optical and Magnetic Materials
Semiconductor
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Optoelectronics
Light emission
photoluminescence
Crystallite
0210 nano-technology
business
Zdroj: physica status solidi (b)
physica status solidi (b), Wiley, 2019, 256 (10), pp.1900199. ⟨10.1002/pssb.201900199⟩
Phys.Status Solidi B
Phys.Status Solidi B, 2019, 256 (10), pp.1900199. ⟨10.1002/pssb.201900199⟩
ISSN: 0370-1972
1521-3951
DOI: 10.1002/pssb.201900199⟩
Popis: International audience; Defect engineering is applied to hybrid (CH3NH3)PbI3 organic–inorganic perovskites. These materials have become one of the most promising low‐cost alternatives to traditional semiconductors in the field of photovoltaics and light emitting devices. Here Helium ion irradiation at low energy has been used as a tool for the controlled introduction of point defects in both single crystals and polycrystalline thin films. The irradiation defects modify the opto‐electronic properties as probed using photoluminescence (PL) spectroscopy from 10 K to room‐temperature. Contrary to usual semiconductors, a very good resilience of the PL properties with irradiation is observed, even associated to an enhancement of the optical emission at low temperature. These results are discussed in relation with the tetragonal to orthorhombic low‐temperature phase transition below T = 160 K. A comparison between spectra from single crystals and polycrystalline films, both with and without irradiation defects, allows a better understanding of the light emission mechanisms in both kinds of samples. The authors thereby evidence radiation hardness of these materials and the specificity of defects and their impact on light emission properties.
Databáze: OpenAIRE
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