Intrinsic and extrinsic performance limits of graphene devices on SiO2
| Autor: | Shudong Xiao, Michael S. Fuhrer, Masa Ishigami, Jian-Hao Chen, Chaun Jang |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Silicon
Light Macromolecular Substances Surface Properties Mean free path Phonon Molecular Conformation Biomedical Engineering FOS: Physical sciences Bioengineering Nanotechnology Carbon nanotube law.invention law Electrical resistivity and conductivity Materials Testing Computer Simulation General Materials Science Particle Size Electrical and Electronic Engineering Physics Condensed Matter - Materials Science Phonon scattering Condensed matter physics business.industry Graphene Scattering Materials Science (cond-mat.mtrl-sci) Acoustics Condensed Matter Physics Carbon Atomic and Molecular Physics and Optics Nanostructures Condensed Matter - Other Condensed Matter Semiconductor Models Chemical business Other Condensed Matter (cond-mat.other) |
| Zdroj: | Nature Nanotechnology. 3:206-209 |
| ISSN: | 1748-3395 1748-3387 |
| DOI: | 10.1038/nnano.2008.58 |
| Popis: | The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that acoustic phonon scattering[4-6] is indeed independent of n, and places an intrinsic limit on the resistivity in graphene of only 30 Ohm at room temperature (RT). At a technologically-relevant carrier density of 10^12 cm^-2, the mean free path for electron-acoustic phonon scattering is >2 microns, and the intrinsic mobility limit is 2x10^5 cm^2/Vs, exceeding the highest known inorganic semiconductor (InSb, ~7.7x10^4 cm^2/Vs[9]) and semiconducting carbon nanotubes (~1x10^5 cm^2/Vs[10]). We also show that extrinsic scattering by surface phonons of the SiO2 substrate[11,12] adds a strong temperature dependent resistivity above ~200 K[8], limiting the RT mobility to ~4x10^4 cm^2/Vs, pointing out the importance of substrate choice for graphene devices[13]. 16 pages, 3 figures |
| Databáze: | OpenAIRE |
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