Dual Gated Silicon Nanowire Field Effect Transistors
| Autor: | D. Keller, Oren Knopfmacher, Michel Calame, Christian Schönenberger |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Fabrication Chemistry(all) Silicon on insulator Nanotechnology Hardware_PERFORMANCEANDRELIABILITY Hardware_INTEGRATEDCIRCUITS Wafer Electrolyte Gate Hardware_ARITHMETICANDLOGICSTRUCTURES Silicon nanowires SOI business.industry Silicon Nanowires pH sensing FET General Medicine Liquid cell Ph sensing Chemical Engineering(all) Optoelectronics Field-effect transistor ISFET business Hardware_LOGICDESIGN |
| Zdroj: | Procedia Chemistry. 1(1):678-681 |
| ISSN: | 1876-6196 |
| DOI: | 10.1016/j.proche.2009.07.169 |
| Popis: | Silicon Nanowire field effect transistors (SiNWFETs) are ideal candidates for basic sensing units. We report here on a top down fabrication process in SOI wafers yielding SiNWFETs. We operate the SiNWFETs in a liquid cell and control their operation with two gates: a liquid gate and a back gate. We compare the combined effects of the two gates (dual gating) on the transport characteristics in electrolytes and show that both gates are essential to perform well-defined sensing experiments. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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