Texture analysis of silicon with an heterogeneous morphology used for the photovoltaic conversion by neutron diffraction
| Autor: | C. Esling, P. Andonov, P. Dervin |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1987 |
| Předmět: |
Morphology (linguistics)
Materials science Silicon orientation distribution function Neutron diffraction low indices lattice planes chemistry.chemical_element 02 engineering and technology 01 natural sciences 7. Clean energy photovoltaic conversion Optics neutron diffraction 0103 physical sciences Bridgman method pole densities smoothing computer programs Texture (crystalline) texture analysis neutron diffraction examination of materials 010302 applied physics business.industry Photovoltaic system silicon direct pole figures semiconductor 021001 nanoscience & nanotechnology spherical harmonics analysis heterogeneous morphology Semiconductor chemistry [PHYS.HIST]Physics [physics]/Physics archives Optoelectronics rapid solidification exploring mode polycrystalline ingots Si elemental semiconductors 0210 nano-technology business texture Electron backscatter diffraction |
| Zdroj: | Revue de Physique Appliquée Revue de Physique Appliquée, Société française de physique / EDP, 1987, 22 (7), pp.603-612. ⟨10.1051/rphysap:01987002207060300⟩ |
| ISSN: | 0035-1687 2777-3671 |
| Popis: | Polycrystalline silicon ingots, obtained by rapid solidification according to Bridgman method without seed crystal, are studied. The texture in the bulk, determined using the transmission neutron diffraction, is characterized from the direct pole figures plotted for the four families of the low indices lattice planes (400), (220), (111) and (113). An accurate exploring mode has been defined for this heterogeneous material. The use of smoothing computer programs on the pole densities is necessary to calculate the Orientation Distribution Function (O.D.F.) by spherical harmonics analysis. |
| Databáze: | OpenAIRE |
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