An SEM-Based Nanomanipulation System for Multiphysical Characterization of Single InGaN/GaN Nanowires
Autor: | Linghao Du, Zetian Mi, Yu Sun, Peng Pan, Juntian Qu, Renjie Wang, Xinyu Liu |
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Rok vydání: | 2023 |
Předmět: |
010302 applied physics
Materials science Nanomanipulator Scanning electron microscope business.industry Nanowire Nanoprobe 02 engineering and technology Conductive atomic force microscopy Electroluminescence 021001 nanoscience & nanotechnology 01 natural sciences Nanomaterials Control and Systems Engineering 0103 physical sciences Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Nanoprobing |
Zdroj: | IROS |
ISSN: | 1558-3783 1545-5955 |
DOI: | 10.1109/tase.2022.3146486 |
Popis: | Functional nanomaterials possess exceptional multi-physical (e.g., mechanical, electrical and optical) properties compared with their bulk counterparts. To facilitate both synthesis and device applications of these nanomaterials, it is highly desired to characterize their multi-physical properties with high accuracy and efficiency. The nanomanipulation techniques under scanning electron microscopy (SEM) has enabled the testing of mechanical and electrical properties of various nanomaterials. However, the seamless integration of mechanical, electrical, and optical testing techniques into an SEM for triple-field-coupled characterization of single nanostructures is still unexplored. In this work, we report the first SEM-based nanomanipulation system for high-resolution mechano-optoelectronic testing of single semiconductor InGaN/GaN nanowires (NWs). A custom-made optical measurement setup was integrated onto a four-probe nanomanipulator inside an SEM, with two optical microfibers actuated by the nanoma-nipulator for NW excitation and emission measurement. A conductive tungsten nanoprobe and a conductive atomic force microscopy (AFM) cantilever probe were integrated onto the nanomanipulator for electrical nanoprobing of single NWs for electroluminescence (EL) measurement. The AFM probe also served as a force sensor for quantifying the contact force applied to the NW during nanoprobing. Using this unique system, we examined, for the first time, the effect of mechanical compression applied to an InGaN/GaN NW on its optoelectronic properties. |
Databáze: | OpenAIRE |
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