Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation
| Autor: | Vitali V. Kozlovski, Klavdia S. Davydovskaya, M E Levinshtein, Alexander A. Lebedev |
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| Rok vydání: | 2021 |
| Předmět: |
Technology
Materials science Proton charge removal rate Orders of magnitude (temperature) irradiation temperature Electron Review radiation hardness compensation chemistry.chemical_compound proton and electron irradiation silicon carbide Silicon carbide General Materials Science Irradiation Composite material Radiation hardening Microscopy QC120-168.85 QH201-278.5 Engineering (General). Civil engineering (General) Acceptor TK1-9971 chemistry Descriptive and experimental mechanics Electrical engineering. Electronics. Nuclear engineering TA1-2040 |
| Zdroj: | Materials Materials, Vol 14, Iss 4976, p 4976 (2021) |
| ISSN: | 1996-1944 |
| Popis: | The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the probability of the formation of these centers decreases, and they are partly annealed out. As a result, the carrier removal rate in SiC becomes ~6 orders of magnitude lower in the case of irradiation at 500 °C. Once again, this proves that silicon carbide is promising as a material for high-temperature electronics devices. |
| Databáze: | OpenAIRE |
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