Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation
| Autor: | Mathieu Moreau, Santhosh Onkaraiah, J-M. Portal, Marc Bocquet, H. Aziza, Haithem Ayari |
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| Přispěvatelé: | Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Engineering
business.industry 020208 electrical & electronic engineering Oxide 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY 021001 nanoscience & nanotechnology Voltage modulation Resistive random-access memory chemistry.chemical_compound Amplitude chemistry Robustness (computer science) 0202 electrical engineering electronic engineering information engineering Electronic engineering Hardware_INTEGRATEDCIRCUITS [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology business Voltage Hardware_LOGICDESIGN |
| Zdroj: | 2016 11TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS) 2016 11TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS), Apr 2016, Istanbul, Turkey. pp.1-5, ⟨10.1109/DTIS.2016.7483892⟩ DTIS |
| DOI: | 10.1109/DTIS.2016.7483892⟩ |
| Popis: | International audience; In this paper multilevel storage characteristic in Oxide-based Resistive RAM (OxRRAM) is demonstrated by modulating the amplitude of the cell programming voltages. Four resistance levels are clearly obtained. Impact of variability on a multilevel 1T-1R OxRRAM circuit is analyzed quantitatively at a circuit level to guarantee the robustness of the technology. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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