Silicon nanocrystal formation upon annealing of SiO2 layers implanted with Si ions
| Autor: | Vladimir A. Volodin, M. O. Ruault, V. G. Kesler, A. F. Leier, S. G. Yanovskaya, G. A. Kachurin |
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| Přispěvatelé: | Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11) |
| Rok vydání: | 2002 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science Scattering Annealing (metallurgy) 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials symbols.namesake Crystallography X-ray photoelectron spectroscopy Nanocrystal 0103 physical sciences symbols Surface layer 0210 nano-technology Raman spectroscopy Raman scattering |
| Zdroj: | Semiconductors Semiconductors, 2002, 36, pp.647-651 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1485663 |
| Popis: | The formation of silicon nanocrystals in SiO2 layers implanted with Si ions was investigated by Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence. The excess Si concentration was varied between 3 and 14 at. %. It was found that Si clusters are formed immediately after implantation. As the temperature of the subsequent annealing was raised, the segregation of Si accompanied by the formation of Si-Si4 bonds was enhanced but the scattering by clusters was reduced. This effect is attributed to the transformation of loosely packed clusters into compact, separate-phase nanoscale Si precipitates, with the Raman peak observed at 490 cm−1 being related to surface scattering. The process of Si segregation was completed at 1000°C. Nevertheless, characteristic nanocrystal photoluminescence was observed only after annealing at 1100°C. Simultaneously, scattering in the range 495–520 cm−1, typical of nanocrystals, appeared; however, the “surface-related” peak at 490 cm−1 persisted. It is argued that nanocrystals are composed of an inside region and a surface layer, which is responsible for their increased formation temperature. |
| Databáze: | OpenAIRE |
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