High-temperature kinetics of Si-containing precursors for ceramic processing
| Autor: | Paul Roth, D. Woiki, Laurent Catoire |
|---|---|
| Přispěvatelé: | Génie des Procédés (GDP), Unité de Chimie et Procédés (UCP), École Nationale Supérieure de Techniques Avancées (ENSTA Paris)-École Nationale Supérieure de Techniques Avancées (ENSTA Paris) |
| Rok vydání: | 1997 |
| Předmět: |
Environmental Engineering
Argon [SPI.FLUID]Engineering Sciences [physics]/Reactive fluid environment General Chemical Engineering Kinetics Analytical chemistry chemistry.chemical_element 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology Dilution [SPI]Engineering Sciences [physics] 020401 chemical engineering chemistry visual_art Elementary reaction visual_art.visual_art_medium Organic chemistry Flash photolysis Ceramic 0204 chemical engineering 0210 nano-technology Shock tube ComputingMilieux_MISCELLANEOUS Biotechnology |
| Zdroj: | Scopus-Elsevier AIChE Journal AIChE Journal, Wiley, 1997, 43 (S11), ⟨10.1002/aic.690431311⟩ |
| ISSN: | 1547-5905 0001-1541 |
| Popis: | Experimental investigations of high-temperature kinetics of Si-precursor molecules relevant to CVD and ceramic processing are described. Reaction systems using SiH 4 , Si 2 H 6 , and SiCl 4 highly diluted in argon were studied in a shock tube, a high-temperature wave reactor, by monitoring in situ the concentrations of atomic or radical reactants Si, H, Cl, SiH, and SiH 2 . Because of the very high dilution, the measured properties are sensitive to a limited number of elementary reactions, allowing a relatively direct determination of the respective rate coefficients. Both thermal pyrolysis and laser flash photolysis methods were used to expand the investigated temperature range. An overview of the bimolecular Si-atom reactions is given. |
| Databáze: | OpenAIRE |
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