Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique

Autor:	Sheng-Fu Yu, Jui-Fen Chien, Hua-Yang Liao, Makoto Shiojiri, Ray-Ming Lin, Miin-Jang Chen, Jing-Jong Shyue
Rok vydání:	2012
Předmět:	Materials science business.industry Doping Analytical chemistry Heterojunction Electroluminescence medicine.disease_cause law.invention Atomic layer deposition law medicine Remote plasma Optoelectronics General Materials Science business Luminescence Ultraviolet Light-emitting diode
Zdroj:	ACS Applied Materials & Interfaces. 5:227-232
ISSN:	1944-8252 1944-8244
DOI:	10.1021/am301799j
Popis:	Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5408333abdcef99445483d2c0b670b9d https://doi.org/10.1021/am301799j Zobrazit plný text záznamu