Athermal effects in ion implanted layers
| Autor: | H. Ryssel, László P. Biró, G. Serfözö, A. Kuki, N. Q. Khanh, L. Frey, József Gyulai, T. Kormany |
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| Rok vydání: | 1994 |
| Předmět: |
inorganic chemicals
Nuclear and High Energy Physics Radiation Silicon business.industry Chemistry chemistry.chemical_element Mineralogy Photoelectric effect Condensed Matter Physics Charged particle Ion implantation Electric field Optoelectronics General Materials Science Wafer business Boron Excitation |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 1029-4953 1042-0150 |
| Popis: | Defect structure and electrical characterization of boron and arsenic implanted layers has been investigated for implantation under athermal (light) excitation. This Photon Assisted (PA) implantation owes its specific properties to an additional electric field acting on charged particles including carriers and charged defects. It was shown that in case of n-type silicon this extra field draws charged vacancies and self-interstitials towards each other and, thus, diminishes transient diffusion of boron. This effect resulted in junctions which are about 20% shallower compared to conventionally processed reference wafers. Experiments using light of an Ar-ion laser and white light of a high pressure Xe are lamp were compared |
| Databáze: | OpenAIRE |
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