A fully-integrated high-isolation transfer switch for G-band in-situ reflectometer applications
| Autor: | W. Aouimeur, Estelle Lauga-Larroze, Daniel Gloria, Jean-Daniel Arnould, Marc Margalef-Rovira, Issa Alaji, Christophe Gaquiere |
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| Přispěvatelé: | Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab ), Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), STMicroelectronics [Crolles] (ST-CROLLES), Puissance - IEMN (PUISSANCE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), This work is supported by the project ANR-14-CE260027-BISCIG of the French National Research Agency (ANR). The authors wish to acknowledge Jose Moron Guerra from Asygn Grenoble, Alexandre Silligaris from CEA-Leti Grenoble and Sylvie Lepilliet from IEMN for their help in design and characterization., PCMP CHOP, Laboratoire commun STMicroelectronics-IEMN T1, ANR-14-CE26-0027,BISCIG,Caractérisation totalement intégrée en bande G(2014), Reliable RF and Mixed-signal Systems (RMS ), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA) |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
business.industry
Computer science 020208 electrical & electronic engineering Overhead (engineering) Electrical engineering 020206 networking & telecommunications Topology (electrical circuits) 02 engineering and technology Transfer switch BiCMOS CMOS Built-in self-test G band 0202 electrical engineering electronic engineering information engineering Insertion loss [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics business |
| Zdroj: | Proceedings of IEEE MTT-S International Conference on Microwaves for Intelligent Mobility, ICMIM 2020 IEEE MTT-S International Conference on Microwaves for Intelligent Mobility, ICMIM 2020 IEEE MTT-S International Conference on Microwaves for Intelligent Mobility, ICMIM 2020, Nov 2020, Linz, Austria. 4 p., ⟨10.1109/ICMIM48759.2020.9299098⟩ |
| Popis: | International audience; This paper describes two fully-integrated transfer switches designed for in-situ reflectometers and Built-In Self-Test applications (BIST) in the 140 to 220 GHz band (G-band). The proposed switches were designed in the STMicroelectronics 55-nm BiCMOS technology using the Single-Shunt and the Double-Shunt topology, respectively. In the 140 to 195 GHz frequency range, the Double-Shunt Transfer Switch shows an isolation between 27 and 46 dB, and an insertion loss between 5 and 7 dB. Compared to the Single-Shunt Transfer Switch, the double shunt switch presents a much better isolation while having a quite comparable insertion loss and area overhead. To the best of our knowledge, the proposed switches are the first fully integrated transfer switches in BiCMOS or CMOS technologies. |
| Databáze: | OpenAIRE |
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