Electrical current through individual pairs of phosphorus donor atoms and silicon dangling bonds
| Autor: | Philipp Rahe, Allison Payne, Kapildeb Ambal, Clayton C. Williams, Christoph Boehme, James A. Slinkman |
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| Rok vydání: | 2016 |
| Předmět: |
Multidisciplinary
Materials science Silicon Spins Dangling bond chemistry.chemical_element Strained silicon 02 engineering and technology Electron 021001 nanoscience & nanotechnology Bioinformatics 01 natural sciences 7. Clean energy Molecular physics Article Condensed Matter::Materials Science Scanning probe microscopy chemistry Electric field 0103 physical sciences Crystalline silicon 010306 general physics 0210 nano-technology |
| Zdroj: | Scientific Reports |
| ISSN: | 2045-2322 |
| DOI: | 10.1038/srep18531 |
| Popis: | Nuclear spins of phosphorus [P] donor atoms in crystalline silicon are among the most coherent qubits found in nature. For their utilization in scalable quantum computers, distinct donor electron wavefunctions must be controlled and probed through electrical coupling by application of either highly localized electric fields or spin-selective currents. Due to the strong modulation of the P-donor wavefunction by the silicon lattice, such electrical coupling requires atomic spatial accuracy. Here, the spatially controlled application of electrical current through individual pairs of phosphorus donor electron states in crystalline silicon and silicon dangling bond states at the crystalline silicon (100) surface is demonstrated using a high‐resolution scanning probe microscope operated under ultra‐high vacuum and at a temperature of 4.3K. The observed pairs of electron states display qualitatively reproducible current-voltage characteristics with a monotonous increase and intermediate current plateaus. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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