Emergence of a weak topological insulator from the BixSey family
| Autor: | B. R. Sekhar, Anil Kumar Yadav, Koushik Pal, H. Lohani, Abhishek Banerjee, Umesh V. Waghmare, P. Mishra, Kunjalata Majhi, P. S. Anil Kumar, Rajamohan Ganesan |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Condensed matter physics Band gap Bilayer Physics chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Bismuth chemistry Topological insulator 0103 physical sciences Centre for Nano Science and Engineering Density functional theory Thin film 010306 general physics 0210 nano-technology Spectroscopy Single crystal |
| Zdroj: | IndraStra Global. |
| ISSN: | 2381-3652 |
| Popis: | We report the emergence of a weak topological insulator (WTI), BiSe, of the Bi-chalcogenide family with an indirect bandgap of 42 meV. Its structural unit consists of a bismuth bilayer (Bi-2), a known quantum spin hall insulator sandwiched between two units of Bi2Se3 which are three dimensional strong topological insulators. Our density functional theory calculations confirm the WTI phase and angle resolved photo-emission spectroscopy measurements carried out on cleaved single crystal flakes show Rashba states that closely agree with our theoretical predictions. Finally, we present a comparison between electronic and magneto-transport properties measured on single crystal flakes and thin films of BiSe. Published by AIP Publishing. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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