0.4-μm InP/InGaAs DHBT with a 380-GHz ${f_{T}}$, > 600-GHz $f_{\max}$ and BVCE0 > 4.5 V

Autor: Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Chhandak Mukherjee, Jeremie Renaudier, Cristell Maneux
Rok vydání: 2021
Zdroj: 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
DOI: 10.1109/bcicts50416.2021.9682209
Databáze: OpenAIRE