A C-Band GaN Single Chip Front-End for SAR Applications
| Autor: | C. Lanzieri, A. Salvucci, A. Suriani, G. Polli, M. Vittori, Rocco Giofre, M. Feudale, Sergio Colangeli, Walter Ciccognani, Ernesto Limiti |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Power-added efficiency
Materials science C band business.industry 020208 electrical & electronic engineering Settore ING-INF/01 020206 networking & telecommunications Gallium nitride 02 engineering and technology Noise figure Chip Low-noise amplifier chemistry.chemical_compound chemistry 0202 electrical engineering electronic engineering information engineering Optoelectronics Antenna (radio) business Monolithic microwave integrated circuit |
| Zdroj: | RWS |
| Popis: | This paper describes the design and experimental characterization of a C-Band Gallium Nitride (GaN) Single Chip Front End (SCFE) designed for Synthetic Aperture Radar (SAR) systems. The SCFE is composed by a three stage High Power Amplifier (HPA), a Single Pole Double Throw switch (SPDT) and a three stage Low Noise Amplifier (LNA). The MMIC has been measured in both transmit and receive mode under small- and large-signal conditions showing interesting results. In particular, a small-signal gain around 35 dB with an associated noise figure of about 3.2 dB @T amb in receive mode were achieved, whereas, in transmit mode, 46 dBm of output power and 30% of power added efficiency were obtained at the antenna port reference plane. The chip is optimized to work in the 5.25-5.57 GHz operating band and occupies an area of 7x7 mm2. |
| Databáze: | OpenAIRE |
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