Static and low frequency noise characterization of n-channel 16 nm UTBOX devices
| Autor: | O. Touayar, B. Cretu, Eddy Simoen, N. Ismail, B. Nafaa |
|---|---|
| Přispěvatelé: | Equipe Electronique - Laboratoire GREYC - UMR6072, Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU), Institut National des Sciences Appliquées et de Technologie - Carthage (INSAT Carthage), IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Infrasound Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Characterization (materials science) Threshold voltage Quality (physics) Logic gate 0103 physical sciences MOSFET N channel Optoelectronics [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology business Linear operation ComputingMilieux_MISCELLANEOUS |
| Zdroj: | 2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT) 2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT), Dec 2016, Hammamet, France. ⟨10.1109/SETIT.2016.7939833⟩ |
| DOI: | 10.1109/SETIT.2016.7939833⟩ |
| Popis: | This paper gives a proper characterization of n-channel UTBOX nMOSFETs in linear operation in term of static performances and low frequency noise behavior. At first, the main electrical parameters are extracted, in particular, the threshold voltage, the mobility and the access resistances. Then, the approach of low frequency noise study is presented as a non-destructive diagnostic tool to identify traps in the Si film. These investigations allow to evaluate the device performances, and to assess the quality of the device processing steps. |
| Databáze: | OpenAIRE |
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