Structural and Optical Investigation of GaInP Quantum Dots According to the Growth Thickness for the 700 nm Light Emitters
| Autor: | In Kyu Jang, Hwa Sub Oh, Joon Seop Kwak, Ji Hoon Park, Jong Hyeob Baek, Hyung Joo Lee, Joon Mo Park, Young-Jin Kim, Ho Soung Ryu |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Macromolecular Substances Phosphines Surface Properties Molecular Conformation Biomedical Engineering chemistry.chemical_element Gallium Bioengineering Materials testing Indium Molecular conformation law.invention law Materials Testing Quantum Dots General Materials Science Particle Size Crystallization business.industry General Chemistry Condensed Matter Physics Active layer chemistry Quantum dot Optoelectronics Particle size business |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 13:564-567 |
| ISSN: | 1533-4899 1533-4880 |
| DOI: | 10.1166/jnn.2013.6939 |
| Popis: | We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating a Stranski-Krastanov growth mode. As the ambient temperature is increased to 300 K, the PL spectrum of the B-type dots is annihilated quickly because the large dot size induces a defect-related nonradiative recombination process. In contrast, the PL spectrum of the A-type dots is well maintained to 300 K. These data indicate that the Ga0.33In0.67P material is appropriate for an active layer of 700 nm light emitters. |
| Databáze: | OpenAIRE |
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