Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection
| Autor: | Miltcho B. Danailov, Fulvia Arfelli, Luca Selmi, C. Nichetti, Francesco Driussi, Pierpaolo Palestri, T. Steinhartova, G. Cautero, M. Antonelli, D. De Angelis, R.H. Menk, A. Pilotto, Giorgio Biasiol |
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| Přispěvatelé: | Nichetti, C., Steinhartova, T., Antonelli, M., Biasiol, G., Cautero, G., De Angelis, D., Pilotto, A., Driussi, F., Palestri, P., Selmi, L., Arfelli, F., Danailov, M., Menk, R. H. |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
APDS Charge transport and multiplication in solid media Detector design and construction technologies and materials Solid state detectors Voltage distributions 01 natural sciences Capacitance 030218 nuclear medicine & medical imaging law.invention 03 medical and health sciences 0302 clinical medicine law 0103 physical sciences Absorption (electromagnetic radiation) Instrumentation Mathematical Physics Detector design and construction technologies and material 010308 nuclear & particles physics business.industry Doping Avalanche photodiode Optoelectronics Multiplication Solid state detector business Layer (electronics) Voltage drop |
| Zdroj: | Journal of instrumentation 15 (2020). doi:10.1088/1748-0221/15/02/C02013 info:cnr-pdr/source/autori:Nichetti, C.; Steinhartova, T.; Antonelli, M.; Biasiol, G.; Cautero, G.; De Angelis, D.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Arfelli, F.; Danailov, M.; Menk, R. H./titolo:Effects of p doping on GaAs%2FAlGaAs SAM-APDs for X-rays detection/doi:10.1088%2F1748-0221%2F15%2F02%2FC02013/rivista:Journal of instrumentation/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:15 |
| Popis: | This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine the potential drop only in the multiplication region. We realized such layer under the form of either a delta sheet of C atoms or a 50-nm-thick GaAs:C layer. Devices with these two structures will be discussed and compared in terms of capacitance and response to light. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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