Epitaxial NdFeB films grown by molecular beam epitaxy with an Fe or V underlayer
| Autor: | Soler-Morala, J., Navío, C., Zha, L., Yang, J., Bollero, A. |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| DOI: | 10.5281/zenodo.6396900 |
| Popis: | Rare-earth transition metals thin films have attracted a lot of attention due to their high magnetic anisotropy that makes them great candidates for several applications including high density magnetic recording, microelectromechanical systems and actuators. Rare-earth based thin films also allow the development of novel spintronic devices and they are essential materials for energy-related technologies. Furthermore, the study of certain elements in these rare-earth based systems such as interfaces, grain boundaries or interstitial additions can provide a wider knowledge of their coercivity and magnetization reversal mechanisms. The aim of this study is to analyze the first stages of the growth of NdFeB thin and ultra thin films. For that purpose, NdFeB thin films have been grown on a MgO (001) substrate at 600ºC. An underlayer of 10 nm of Fe was previously grown in order to ensure epitaxiality. A 15 nm vanadium capping layer was deposited afterwards to prevent oxidation. {"references":["A. Morisako et al., J. Magn. Magn. Matter. 304, 46-50 (2003)","X. Liu et al., J. Appl. Phys. 97, 10K301 (2005)","T.-S. Chin, J. Magn. Magn. Matter. 209, 75-79 (2000)","A. Bollero et al., Nanoscale, 12, 1155-1163 (2020)","O. Gutfleisch et al., Adv. Mater. 23, 821–842 (2011)","L. Zha et al., J. Magn. Magn. Matter. 514, 167128 (2020)","S. Bance et al., Appl. Phys. Lett. 104, 182408 (2014)"]} |
| Databáze: | OpenAIRE |
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